发明名称 |
FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR, DISPLAY DEVICE USING FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR DEVICE |
摘要 |
A field effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and the channel part, the source part and the drain part have substantially the same composition except oxygen and an inert gas.
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申请公布号 |
US2010295042(A1) |
申请公布日期 |
2010.11.25 |
申请号 |
US20090864078 |
申请日期 |
2009.01.22 |
申请人 |
IDEMITSU KOSAN CO., LTD. |
发明人 |
YANO KOKI;INOUE KAZUYOSHI;KAWASHIMA HIROKAZU;TOMAI SHIGEKAZU |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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