发明名称 FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR, DISPLAY DEVICE USING FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR DEVICE
摘要 A field effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and the channel part, the source part and the drain part have substantially the same composition except oxygen and an inert gas.
申请公布号 US2010295042(A1) 申请公布日期 2010.11.25
申请号 US20090864078 申请日期 2009.01.22
申请人 IDEMITSU KOSAN CO., LTD. 发明人 YANO KOKI;INOUE KAZUYOSHI;KAWASHIMA HIROKAZU;TOMAI SHIGEKAZU
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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