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发明名称
Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate
摘要
申请公布号
US2010294196(A1)
申请公布日期
2010.11.25
申请号
US20100662616
申请日期
2010.04.26
申请人
SHIN-ETSU CHEMICAL CO., LTD.
发明人
NOGUCHI HITOSHI
分类号
C30B25/20;B32B3/02
主分类号
C30B25/20
代理机构
代理人
主权项
地址
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