| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor preventing film peeling of an organic semiconductor layer to increase the reliability while reducing the contact resistance and wiring resistance among a source, a drain and the organic semiconductor layer to improve the characteristics. SOLUTION: The transistor includes the source 17s and the drain 17d constituted of oppositely disposed electrode portions 17s (P), 17d (P) and wiring portions 17s (L), 17d (L) which are led out of them and the organic semiconductor layer 19 disposed between the electrode parts 17s (P) and 17d (P) in a state in which it is laminated on the electrode portions 17s (P), 17d (P) of the source 17 and the drain 17d. In the source 17s and the drain 17d, the electrode portions 17s (P), 17d (P) and the wiring parts 17s (L), 17d (L) are constituted by using the same layers and at least edge parts of the oppositely disposed electrode portions 17s (P), 17d (P) are made thinner in film thickness than the wiring portions 17s (P), 17d (L). COPYRIGHT: (C)2011,JPO&INPIT
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