发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a multilayer wiring substrate and a double-sided multi-electrode chip. The double-sided multi-electrode chip includes a semiconductor chip and has multiple electrodes on both sides of the semiconductor chip. The double-sided multi-electrode chip is embedded in the multilayer wiring substrate in such a manner that the double-sided multi-electrode chip is not exposed outside the multilayer wiring substrate. The electrodes of the double-sided multi-electrode chip are connected to wiring layers of the multilayer wiring substrate.
申请公布号 US2010295170(A1) 申请公布日期 2010.11.25
申请号 US20100785764 申请日期 2010.05.24
申请人 DENSO CORPORATION 发明人 KOMURA ATSUSHI;KITAMURA YASUHIRO;AKAGI NOZOMU;ASAI YASUTOMI
分类号 H01L23/485;H01L23/367 主分类号 H01L23/485
代理机构 代理人
主权项
地址