FILM-FORMING METHOD AND FILM-FORMING APPARATUS

摘要

Provided is a film-forming method for forming a film on the surface of a subject to be processed. A target, i.e., the base material of the film, and the subject to be processed are disposed to face each other in a chamber, and while generating a magnetic field wherein perpendicular magnetic lines locally pass at predetermined intervals from the sputter surface of the target to the film-forming surface of the subject to be processed, a sputter gas is introduced into the chamber. The gas pressure in the chamber is controlled within the range of 0.3-10.0 Pa, plasma is generated in the space between the target and the subject to be processed by applying a negative direct-current voltage to the target, and while controlling the flying direction of the sputter particles generated by sputtering the target, the sputter particles are led to the subject to be processed and deposited thereon, and the film is formed.