| 摘要 |
PURPOSE: A semiconductor memory device and a method for measuring sensing margin of the same are provided to test a high sensing margin and a low sensing margin through one read operation by changing the voltage level of a sensing node. CONSTITUTION: A pre-charge unit(310) supplies a precharge current to a sensing node while a precharge operation section. A data input unit(320) inputs data to the sensing node. A sense amplifier(330) senses the data of the sensing node. The precharging unit flows a micro-current to the sensing node. The amount of the micro-current is controlled by a control signal. |
