发明名称 |
Tunnel field effect transistor |
摘要 |
A tunnel transistor includes source diffusion (4) of opposite conductivity type to a drain diffusion (6) so that a depletion layer is formed between source and drain diffusions in a lower doped region (8). An insulated gate (16) controls the position and thickness of the depletion layer. The device includes a quantum well formed in accumulation layer (20) which is made of a different material to the lower layer (2) and cap layer (22).
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申请公布号 |
US7839209(B2) |
申请公布日期 |
2010.11.23 |
申请号 |
US20070444140 |
申请日期 |
2007.10.03 |
申请人 |
NXP B.V. |
发明人 |
CURATOLA GILBERTO;AGARWAL PRABHAT;SLOTBOOM JAN W.;HURKX GODEFRIDUS A. M.;SURDEANU RADU;DOORNBOS GERBEN |
分类号 |
H01L25/00 |
主分类号 |
H01L25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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