发明名称 |
Stress programming of transistors |
摘要 |
Methods for stressing transistors in order to program the transistors and for determining whether such transistors have indeed been programmed are described herein. The novel methods may include initially stressing a transistor by applying to the transistor a voltage greater than operational voltages of the transistor to create defects in the transistor. A current flowing through the transistor may then be measured to determine whether the transistor has been programmed, the measured current indicative of the presence of the defects.
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申请公布号 |
US7839160(B1) |
申请公布日期 |
2010.11.23 |
申请号 |
US20080053428 |
申请日期 |
2008.03.21 |
申请人 |
MARVELL INTERNATIONAL LTD. |
发明人 |
SIDHU LAKHBEER S.;LI CHOY HING |
分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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