| 发明名称 |
Methods for forming III-V semiconductor device structures |
| 摘要 |
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. |
| 申请公布号 |
US7838392(B2) |
申请公布日期 |
2010.11.23 |
| 申请号 |
US20070943188 |
申请日期 |
2007.11.20 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LANGDO THOMAS A.;CURRIE MATTHEW T.;HAMMOND RICHARD;LOCHTEFELD ANTHONY J.;FITZGERALD EUGENE A. |
| 分类号 |
H01L21/30;H01L21/20;H01L21/331;H01L21/336;H01L21/337;H01L21/762;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L21/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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