| 摘要 |
A non-volatile semiconductor storage device, includes a memory array including memory cells, a plurality of word lines installed in the memory array, a sub-decoder including a pull-up power line, a pull-down power line and a plurality of drivers, a pre-decoder coupled to the sub-decoder, and generating a pre-decode signal; and a main decoder coupled to the sub-decoder, and generating a main decode signal. A potential of the pull-up power line and a potential of the pull-down power line are controlled in response to the main decode signal. The plurality of drivers drives the plurality of word lines in response to the pre-decode signal. Each of the plurality of drivers comprises a first transistor including a first node which is coupled to the pull-up power line, a second node which is coupled to one of the plurality of word lines and a third node which is supplied with the pre-decode signal, and a second transistor including a fourth node which is coupled to the pull-down power line, a fifth node which is coupled to the second node and a sixth node which is supplied to the pre-decode signal. The pre-decoder pulls down the pre-decode signal to a negative potential lower than a ground potential.
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