| 摘要 |
Memory devices include a semiconductor substrate and a plurality of wordlines on the semiconductor substrate. A ground select line is on the semiconductor substrate on a first side of the wordlines and a string select line is on the semiconductor substrate on a second side of the wordlines. The wordlines extend between the ground select line and the string select line. First spacers are disposed between the wordlines, between the ground select line and an adjacent one of the wordlines and between the string select line and an adjacent one of the wordlines. Second spacers are disposed on sidewalls of the ground select line and the string select line displaced from the first spacers. The second spacers are a different material than the first spacers. The memory devices may be nonvolatile memory devices. Methods are also provided for forming the memory devices.
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