发明名称 Memory circuit and control method thereof
摘要 A memory circuit having a global signal driving circuit, which, when a first read signal is inputted from a first bit signal line with a column signal inputted from a column signal line, outputs the first read signal as a global signal from a global signal line, and, when a first driving write signal is inputted from the first bit signal line, inhibits the first driving write signal from being outputted to the global signal line on the basis of a first write signal inputted from a first write signal line.
申请公布号 US7839704(B2) 申请公布日期 2010.11.23
申请号 US20090405494 申请日期 2009.03.17
申请人 FUJITSU LIMITED 发明人 MURATA SEIJI
分类号 G11C7/00;G11C7/22 主分类号 G11C7/00
代理机构 代理人
主权项
地址