| 摘要 |
<p>Provided is a method for producing a silicon wafer with which it is possible to eliminate crystal defects in the wafer surface layer part and further improve gettering performance by subjecting a silicon wafer, which has been cut from a silicon single crystal ingot grown by the Czochralski method, to RTA treatment in a nitriding gas atmosphere to form an oxide film on both surfaces of the wafer, then forming a polysilicon layer, and finally, removing the polysilicon layer from the wafer surface side. A polysilicon layer can be formed on the back surface alone rather than on both surfaces of the wafer. It is preferred that a wafer formed from the defect-free region be used as the raw material because it is thereby possible to guarantee a stable defect-free layer on the wafer surface part. Also provided is a silicon wafer whereof the overall gettering capability is improved by using this method for producing a silicon wafer.</p> |
