METHOD FOR FABRICATING SILICON AND/OR GERMANIUM NANOWIRE

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a silicon and/or germanium nanowire which can be used in a field of very high temperature not to be bearable and contributes to reduction of thermal load about its enforcement and is carried out at temperature of lower than 450°C and does not bring impurity to the nanowire for a constituting element of a catalyst and is organized about crystallinity and hardly has a defect. SOLUTION: In the method for assembling a silicon and/or germanium nanowire on a substrate by growth of a nanowire to be produced, a precursor including silicon and a precursor including germanium are brought into contact with a compound including copper oxide present on the substrate. COPYRIGHT: (C)2011,JPO&INPIT