| 摘要 |
<p>The present invention relates to a nonvolatile memory device on a substrate in which a protrusion part is formed. According to the invention, electric charge capturing layers are formed on both sides (a source side and drain side) of the protrusion part, and an electrode (1st electrode) for programming electric charges in the electric charge capturing layers and an electrode (2nd electrode) for reading the programmed state are installed on the source and drain. Additionally, a current controller for controlling the quantity of the current outputted according to the previously programmed state is installed on the 2nd electrode. The off current or the on current is inputted into the 2nd electrode on the source side or the drain side, more specifically, to the current controller installed on the 2nd electrode according to the state of the programmed electric charges in the electric charge capturing layers. In addition, the current controller includes phase change layers inside thereof comprised of phase change materials, thereby programming the state by applying set pulses and reset pulses in advance and controlling the output quantity of the off current and the on current that are inputted according to the programmed state. Therefore, the programmed state can be read by examining the quantity of the current which is outputted from the current controller. Particularly, in a preferred embodiment of the present invention, 4-level currents can be outputted by including two phase change layers in the current controller, thereby allowing 2-bit programming on the source side and 2-bit programming on the drain side. Consequently, 4-bit programming can be carried out within one device.</p> |
