SEMICONDUCTOR DEVICE

摘要

Disclosed is a JFET (100) which is a semiconductor device that can be manufactured at a reduced cost. The JFET (100) comprises a silicon carbide substrate (1), an active layer (8) that is formed from single crystal silicon carbide and arranged on one main surface of the silicon carbide substrate (1), a source electrode (92) that is arranged on the active layer (8), and a drain electrode (93) that is arranged on the active material layer (8) at a distance from the source electrode (92). The silicon carbide substrate (1) contains a base layer (10) that is formed from single crystal silicon carbide and an SiC layer (20) that is arranged on the base layer (10). The defect density of the SiC layer (20) is lower than the defect density of the base layer (10).