| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of a transfer failure without degrading a light collection rate, and to prevent degradation of a dark current characteristic. SOLUTION: This solid-state imaging device includes: a semiconductor substrate 1 including light receiving units 2 arranged in a matrix-like form, and charge transfer units 3 each arranged between the light receiving units 2 adjacent to each other; transfer electrodes 5 formed above the charge transfer units 3; interlayer dielectrics 6 each formed to cover sides and the upper surface of the transfer electrode 5; and shading films 7 each formed to cover the sides and the upper surface of the interlayer dielectric 6. The shading film 7 includes a first shading film 7a formed to cover the sides and the upper surface of the interlayer dielectric 6, and a second shading film 7b formed to expose the corners of the first shading film 7a, and to covers other than the corners on the sides and the upper surface of the first shading film 7a. COPYRIGHT: (C)2011,JPO&INPIT
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