| 摘要 |
A film deposition apparatus that deposits a compound thin film on a front surface of a substrate held in a sputter deposition chamber by reactive sputtering, in which the sputter deposition chamber includes a first film quality adjustment gas introduction device that introduces a film quality adjustment gas to a rear surface of the substrate, the film quality adjustment gas adjusting a film quality of a compound thin film deposited on the front surface of the substrate.
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