发明名称 |
PROCESS FOR MANUFACTURE OF BONDED WAFER |
摘要 |
The present invention provides a method for manufacturing a bonded wafer comprising steps of forming an oxide film on at least a surface of a base wafer or a surface of a bond wafer; bringing the base wafer and the bond wafer into close contact via the oxide film; subjecting these wafers to a heat treatment under an oxidizing atmosphere to bond the wafers together; grinding and removing the outer periphery of the bond wafer so that the outer periphery has a predetermined thickness; subsequently removing an unbonded portion of the outer periphery of the bond wafer by etching; and then thinning the bond wafer so that the bond wafer has a desired thickness, wherein the etching is conducted by using a mixed acid at 30°C or less at least comprising hydrofluoric acid, nitric acid, and acetic acid. Thus there is provided a method for manufacturing a bonded wafer by which unbonded portions of the outer periphery of the bond wafer are removed with a high selectivity ratio (R Si /R SiO2 ) without causing metallic contamination. |
申请公布号 |
EP1887612(A4) |
申请公布日期 |
2010.11.17 |
申请号 |
EP20060746580 |
申请日期 |
2006.05.18 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
OKABE, KEIICHI;MIYAZAKI, SUSUMU |
分类号 |
H01L21/02;H01L21/306;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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