MANUFACTURING METHOD OF SILICON WAFER WITH CONTROLLED BULK MICRO DEFECTS CONCENTRATION BY LOW-TEMPERATURE RAPID ANNEALING

摘要

PURPOSE: A silicon wafer manufacturing method is provided to easily satisfy various kinds of BMD concentration levels by using a thermal processing temperature relation equation between a BMD(Bulk Micro Defects) concentration and the thermal processing temperature. CONSTITUTION: A silicon single crystal of an ingot type is grown up(S10). A silicon epitaxial ingot tenuously is cut into a wafer shape(S20). A lapping process of mechanically polishing both sides of the silicon wafer cut is executed(S30). Deformity and the damage caused by the lapping process are removed(S40). A thermal process is executed for the silicon wafer(S50). The surface of the silicon wafer is polished(S60).