发明名称 SEMICONDUCTOR NANOCRYSTAL HETEROSTRUCTURES
摘要 A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating. The present invention concerns a method of preparing such a coated nanocrystal.
申请公布号 EP1537263(B1) 申请公布日期 2010.11.17
申请号 EP20030810871 申请日期 2003.08.12
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY 发明人 KIM, SUNGJEE;BAWENDI, MOUNGI, G.
分类号 D02G3/00;C04B41/46;C09K11/00;C09K11/88;C30B7/00;C30B29/10;C30B29/60;C30B33/00;G01N33/543;G01N33/58;G09G3/34;H01L;H01L21/20;H01L21/208;H01L21/368;H01L29/06;H01L29/165;H01L29/205;H01L29/225;H01L29/267;H01L31/00 主分类号 D02G3/00
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