| 摘要 |
PURPOSE: A method for operating a non-volatile memory device is provided to improve the width of a threshold voltage distribution by compensating a threshold voltage which is raised due to an interference phenomenon. CONSTITUTION: A plurality of word-lines is arranged between a source-selection line and a drain-selection line. A first reading voltage is applied to a k+1-th word line among the word-lines. A first passing voltage is applied to remained word-lines. A threshold voltage level of a memory cell in connection with the k+1-th word-line is detected. According to the threshold voltage level of the memory cell in connection with the k+1-th word-line, a second passing voltage which is higher than the first passing voltage is determined. |
