发明名称 Method of providing block state information in semiconductor memory device including flash memory
摘要 A method of providing block state information in a semiconductor memory device including a flash memory comprises storing block state information on at least one bad block of the flash memory and a plurality of reserved blocks which replace the at least one bad block, and providing the stored block state information to a user in response to a command provided by the user.
申请公布号 US7836244(B2) 申请公布日期 2010.11.16
申请号 US20070933564 申请日期 2007.11.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM HYE-YOUNG;IM JUNG-BEEN
分类号 G06F12/00;G06F13/00;G06F13/28 主分类号 G06F12/00
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