发明名称 Shielded trace structure and fabrication method
摘要 A method includes forming a patterned sacrificial layer on a first carrier and a patterned trace layer on the patterned sacrificial layer. The patterned sacrificial layer and the patterned trace layer are laminated to a dielectric material. The first carrier and the patterned sacrificial layer are removed creating sacrificial layer gaps above the patterned trace layer. The sacrificial layer gaps are filled with a trace layer isolation dielectric material. Shield trenches are laser-ablated within the dielectric material and on opposite sides of a signal trace of the patterned trace layer. The shield trenches are filled with an electrically conductive material to form shield walls. The electrically conductive material is patterned to form a shield top. The shield top, the shield walls, and a second carrier form a bias shield around the signal trace.
申请公布号 US7832097(B1) 申请公布日期 2010.11.16
申请号 US20080018435 申请日期 2008.01.23
申请人 AMKOR TECHNOLOGY, INC. 发明人 HUEMOELLER RONALD PATRICK;RUSLI SUKIANTO;KARIM NOZAD
分类号 H01K3/10 主分类号 H01K3/10
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