发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To secure a predetermined distance between wirings, and to prevent the damage of a lower layer wiring when forming an insulator film formed for securing a distance between the wirings by patterning, etc. SOLUTION: The semiconductor device includes a semiconductor substrate 11, a first wiring 1 that is formed on the semiconductor substrate 11, a second wiring 2 that is formed to cross over the first wiring 1 with a space 9 interposed therebetween at a cross portion in which the first wiring 1 and the second wiring 2 cross each other, a protective film 8 that is formed on the semiconductor substrate 11 so as to cover at least a part of the first wiring 1, the part being located under the second wiring 2 in the cross portion, and an insulator film 3 that is formed on the semiconductor substrate 11 in an island shape on the protective film 8 under the second wiring 2 in the cross portion to be located inside than the edge portion of the protective film 8 and so as to cover the first wiring 1 in the cross portion. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010258202(A) 申请公布日期 2010.11.11
申请号 JP20090106207 申请日期 2009.04.24
申请人 RENESAS ELECTRONICS CORP 发明人 FUJIWARA AKIRA
分类号 H01L21/768;H01L21/316;H01L21/3205;H01L21/338;H01L23/522;H01L29/812 主分类号 H01L21/768
代理机构 代理人
主权项
地址