发明名称 |
METHOD OF OPERATING NONVOLATILE MEMORY DEVICE |
摘要 |
A method of operating a nonvolatile memory device includes determining whether a program operation is performed on even memory cells coupled to even bit lines of a selected page, setting a coupling resistance value between odd bit lines of the selected page and page buffers depending on whether the program operation for the even memory cells is performed, performing a program operation on the odd memory cells coupled to the odd bit lines, and coupling the odd bit line to the page buffer based on the set coupling resistance value and performing an verification operation for verifying whether threshold voltages of the odd memory cells on which the program operation is performed are a target voltage or more.
|
申请公布号 |
US2010284227(A1) |
申请公布日期 |
2010.11.11 |
申请号 |
US20100775562 |
申请日期 |
2010.05.07 |
申请人 |
CHOI WON YEOL;LEE EUN JOUNG |
发明人 |
CHOI WON YEOL;LEE EUN JOUNG |
分类号 |
G11C16/02;G11C16/04;G11C16/06 |
主分类号 |
G11C16/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|