MENETELMÄ SUBSTRAATIN MUODOSTAMISEKSI JA SUBSTRAATTI
摘要
A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
申请公布号
FI20106181(A0)
申请公布日期
2010.11.11
申请号
FI20100006181
申请日期
2010.11.11
申请人
LAUKKANEN, PEKKA;LAANG, JOUKO;PUNKKINEN, MARKO;TUOMINEN, MARJUKKA;TUOMINEN, VEIKKO;DAHL, JOHNNY;VAEYRYNEN, JUHANI
发明人
LAUKKANEN, PEKKA;LAANG, JOUKO;PUNKKINEN, MARKO;TUOMINEN, MARJUKKA;TUOMINEN, VEIKKO;DAHL, JOHNNY;VAEYRYNEN, JUHANI