| 摘要 |
PROBLEM TO BE SOLVED: To sufficiently increase the use rate of a target and sufficiently suppress plasma damages. SOLUTION: A method for manufacturing a semiconductor device includes a metal film depositing step (S1) of depositing a metal film on a semiconductor element having a gate insulating film and a gate electrode by sputtering through a collimating plate having a plurality of through-holes formed therein. In the metal film depositing step, a collimating plate having through-holes having an aspect ratio of 1/6 to 2/3 (a ratio of the depth of the through-hole to the aperture diameter of the hole) is used. The metal film depositing step is carried out in a step of depositing a silicide in the semiconductor device. The antenna ratio of the semiconductor element is controlled to be not more than 45,000. The aspect ratio is gradually decreased from the center to the outer circumference of the collimating plate, and the aspect ratio is at most 1/2 in the outermost circumference of the collimating plate. COPYRIGHT: (C)2011,JPO&INPIT |
