| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electrostatic breakdown protection circuit capable of improving a hold voltage and controlling the hold voltage without changing the size of the electrostatic breakdown protection circuit. <P>SOLUTION: This electrostatic breakdown protection circuit is formed into a structure where a P-type diffusion region 20 having impurity concentration higher than that of a base region from the vicinity of an emitter region 6 toward a collector terminal side 1 is formed on a surface of the base region 12, whereby the hold voltage can be increased, and the value of the hold voltage can be set by the length of the P-type diffusion region. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
