发明名称 |
METHOD AND SYSTEM FOR SEMICONDUCTOR DEVICE PATTERN LOADING EFFECT CHARACTERIZATION |
摘要 |
The present disclosure provides a method and system for characterizing a pattern loading effect. A method may include performing a reflectivity measurement on a semiconductor wafer and determining an anneal process technique based on the reflectivity measurement. The determining the anneal process technique may include determining a spatial distance for a reflectivity change using a reflectivity map generated using the reflectivity measurement. This spatial distance is compared with the thermal diffusion length associated with each of the plurality of anneal process techniques. In an embodiment, a thermal profile map and/or a device performance map may be provided. |
申请公布号 |
US2013330847(A1) |
申请公布日期 |
2013.12.12 |
申请号 |
US201213491252 |
申请日期 |
2012.06.07 |
申请人 |
TSAI CHUN HSIUNG;YU SHENG-WEN;YU DE-WEI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ("TSMC") |
发明人 |
TSAI CHUN HSIUNG;YU SHENG-WEN;YU DE-WEI |
分类号 |
H01L21/66;G06F15/00 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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