| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve steady junction between a heat sink with a semiconductor element mounted thereon, and a support for the heat sink while achieving suitable compatibility between insulation and thermal conductivity of an insulating resin sheet even while adopting the insulating resin sheet as a junction material between the heat sink and the support. <P>SOLUTION: A semiconductor device is configured by integrally joining a heat sink 130 with a semiconductor element 110 mounted thereon, to a cooler 300 for cooling the heat sink. The heat sink 130 of the semiconductor device is joined to the cooler 300 via an insulating junction layer 200. When executing the junction, a first junction layer 210 by a resin sheet is formed on the cooler 300 in such a form that a junction layer forming region narrower than the outer periphery of a junction surface with the heat sink 130 is internally left. After curing it, a second junction layer 220 by the resin sheet is filled and formed in the junction layer forming region. Then, before the resin sheet forming the second junction layer 220 is cured, the heat sink 130 is joined to the cooler 300 by pressurization via the resin sheet forming the first junction layer 210 and the second junction layer 220. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
