| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for properly cooling wafers, while preventing the occurrence of defects in the wafers. SOLUTION: In a method for manufacturing an epitaxial wafer, a wafer W to be processed is accommodated in a reaction furnace, and an epitaxial layer is grown through vapor phase deposition on the wafer W. After that, the wafer W is cooled down, and thereby, the epitaxial wafer is manufactured. While the wafer W is heated by a lamp, the epitaxial layer is grown through vapor phase deposition. By controlling the output of the lamp, the high-temperature wafer W with the epitaxial layer formed is cooled down in such a manner that the cooling speed of the temperature of the wafer W becomes a predetermined speed (e.g., 3°C/second) or below. COPYRIGHT: (C)2011,JPO&INPIT
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