| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for preventing occurrence of defect of a wafer and shortening a temperature rising time of the wafer. SOLUTION: In the method of manufacturing an epitaxial wafer, the wafer W to be treated is housed in a reactor and an epitaxial wafer is manufactured by vapor-growing an epitaxial layer on the wafer W. In heating the wafer W to a predetermined temperature before vapor-growing the epitaxial layer on the wafer W, the wafer W is heated by a lamp in accordance with a high lamping rate in a temperature region before reaching a rate changing temperature. In a temperature region higher than the rate changing temperature, the wafer W is heated by the lamp in accordance with a low lamping rate. After the wafer W is heated to the predetermined temperature, the epitaxial layer is vapor-grown. COPYRIGHT: (C)2011,JPO&INPIT
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