发明名称 |
Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same |
摘要 |
There is disclosed a thermosetting silicon-containing antireflection film-forming composition, to form a silicon-containing antireflection film in a multilayer resist process used in a lithography, wherein the composition is at least capable of forming—on an organic film that is an underlayer film having a naphthalene skeleton—a silicon-containing antireflection film whose refractive index“n”and extinction coefficient“k”at 193 nm satisfy the following relationship: 2n−3.08≰k≰20n−29.4 and 0.01≰k≰0.5. There can be provided, in a multilayer resist process used in a lithography, a thermosetting silicon-containing antireflection film-forming composition to form a silicon-containing antireflection film which can form an excellent pattern having depressed reflection of an exposing light at the time when a photoresist film is formed on the silicon-containing antireflection film formed on an organic film having a naphthalene skeleton as a resist underlayer film and subsequently a resist pattern is formed; has excellent dry etching properties between the photoresist film—which is the upperlayer of the silicon-containing antireflection film—and the organic film—which is the underlayer—; and has an excellent storage stability, and a substrate having the silicon-containing antireflection film from the composition for forming the silicon-containing antireflection film, and a patterning process using the same. |
申请公布号 |
US2010285407(A1) |
申请公布日期 |
2010.11.11 |
申请号 |
US20100662582 |
申请日期 |
2010.04.23 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OGIHARA TSUTOMU;YANO TOSHIHARU;UEDA TAKAFUMI |
分类号 |
G03F7/004;C08G77/00;G03F7/20 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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