| 摘要 |
<p>PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to simplify a memory device manufacturing process and to improve the integration rate of a memory device. CONSTITUTION: A gate pattern includes a tunnel insulating layer(41), a floating gate electrode(42), a charge barrier layer(43), and a control gate electrode(44). The control gate electrode and the charge barrier layer of the gate pattern are formed in the peripheral circuit region. A mask pattern(48) exposes the peripheral circuit region on the first interlayer insulating layer. A first spacer is formed on the sidewall of the gate pattern.</p> |
