发明名称 |
Nitride semiconductor light emitting device |
摘要 |
The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
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申请公布号 |
US7829882(B2) |
申请公布日期 |
2010.11.09 |
申请号 |
US20060581335 |
申请日期 |
2006.10.17 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
KIM SUN WOON;KIM JE WON;KANG SANG WON;SONG KEUN MAN;OH BANG WON |
分类号 |
H01L29/06;H01L33/06;H01L31/00;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;H01L33/32 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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