| 摘要 |
PROBLEM TO BE SOLVED: To form a silicon based insulating film excellent in adhesion to an organic insulating film through active dangling bond incident to Si-H bond. SOLUTION: When a silicon based insulating film 16 comprising a silicon oxide film, a silicon oxide nitride film or a silicon nitride film is formed on the surface of an organic insulating film 15, it is formed such that an Si-H bond is formed on the interface between the silicon based insulating film 16 and the organic insulating film 15. When the organic insulating film 15 is formed of a fluororesin film, bond with carbon on the surface of the fluororesin may be reduced by applying a physical impact thereto before forming the silicon based insulating film 16 or a silane coupling agent may be applied.
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