发明名称 |
High-K dielectric metal gate device structure |
摘要 |
A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS gate structure is deficient of this dopant impurity and further includes a work function tuning layer over the high-k gate dielectric.
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申请公布号 |
US7829949(B2) |
申请公布日期 |
2010.11.09 |
申请号 |
US20090589421 |
申请日期 |
2009.10.23 |
申请人 |
TAIWAN SEMCONDUCTOR MANUFACTURING CO., LTD |
发明人 |
TSENG JOSHUA;LIN KANG-CHENG;YANG JI-YI;HUANG KUO-TAI;CHEN RYAN CHIA-JEN |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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