| 摘要 |
A method of forming a tantalum containing multi-layer film. In one embodiment, the method includes disposing a substrate in a process chamber, heating the substrate, exposing the substrate to a tantalum containing precursor to adsorb at least a portion of the tantalum containing precursor on a surface of the substrate, purging the process chamber with a purge gas, and exposing the substrate to a process space comprising helium and hydrogen ionized at a first radio frequency power to form a first tantalum containing layer on the surface. The method further includes exposing the substrate to the tantalum containing precursor to adsorb at least a portion of the precursor on the first tantalum containing layer, purging the process chamber with the purge gas, and exposing the substrate to the process space at a second radio frequency power to form a second tantalum containing layer, where the second radio frequency power is different from the first radio frequency power.
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