发明名称 |
Vertical carbon nanotube field effect transistors and arrays |
摘要 |
Carbon nanotube field effect transistors, arrays of carbon nanotube field effect transistors, device structures, and arrays of device structures. A stacked device structure includes a gate electrode layer and catalyst pads each coupled electrically with a source/drain contact. The gate electrode layer is divided into multiple gate electrodes and at least one semiconducting carbon nanotube is synthesized by a chemical vapor deposition process on each of the catalyst pads. The gate electrode has a sidewall covered by a gate dielectric and at least one semiconducting carbon nanotube adjacent to the sidewall of the gate electrode. Source/drain contacts are electrically coupled with opposite ends of the semiconducting carbon nanotube to complete the device structure. Multiple device structures may be configured either as a memory circuit or as a logic circuit.
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申请公布号 |
US7829883(B2) |
申请公布日期 |
2010.11.09 |
申请号 |
US20040777576 |
申请日期 |
2004.02.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK CHARLES;HOLMES STEVEN JOHN;HORAK DAVID VACLAV;KOBURGER, III CHARLES WILLIAM;MITCHELL PETER H.;NESBIT LARRY ALAN |
分类号 |
H01L29/06;G11C13/02;H01L21/336;H01L27/28;H01L51/05;H01L51/30;H01L51/40 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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