VERTICAL-TYPE ZINC-OXIDE BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A vertical-type zinc-oxide based light emitting diode and a method for manufacturing the same are provided to improve the light extraction efficiency by etching a part of a first clad layer in order to block the absorption of light. CONSTITUTION: A first cladding layer(13) is composed of an n-type zinc oxide based semiconductor. A zinc oxide based semiconductor active layer(15) with a quantum well structure is formed on the first cladding layer. A second cladding layer(17) with a p-type zinc oxide based semiconductor is formed on the active layer. A metal layer(18) is formed on the second cladding layer. A receptor substrate(23) is formed on the metal layer.