| 摘要 |
PROBLEM TO BE SOLVED: To provide a crosspoint type memory cell array of a new structure which can be multilayered, and does not increase the mask step by multilayering. SOLUTION: A plurality of first electrodes 102 extended to a first direction parallel to a substrate face are isolatedly formed on a substrate through an interlayer insulating film 106. A variable resistor 110 is pinched between the first electrodes 102 and second electrodes 112 at each crossing portion between the first electrodes 102 and the plurality of second electrodes 112 extended to a second direction vertical to the substrate face to form a nonvolatile variable resistance element. Thus, a plurality of crosspoint type two-dimensional memory cell arrays are formed on a face vertical to the substrate, and the second electrodes of the plurality of two-dimensional memory cell arrays are electrically connected to each other, thereby forming a three-dimensional memory cell arrays. COPYRIGHT: (C)2011,JPO&INPIT |
