METHOD OF MANUFACTURING A NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a volatile memory device is provided to prevent the damage of a gate insulating film in a high voltage transistor region by omitting an eliminating process for a tunneling layer and a charge-trapping layer in a peripheral circuit region. CONSTITUTION: A cell region(A) and a peripheral circuit region are defined in a semiconductor substrate(100). The peripheral circuit region includes a low voltage transistor region(B) and a high voltage transistor region(C). A tunneling layer(120) is formed on the semiconductor substrate. A charge-trapping layer(130) is formed on the tunneling layer. The charge trapping layer on the peripheral circuit region is oxidized.