| 摘要 |
PROBLEM TO BE SOLVED: To provide an ESD protection circuit which prevents destruction of a circuit within a semiconductor caused by the ESD, and which avoids deterioration of a radio frequency characteristic in the circuit within the semiconductor even in a radio frequency range such as a millimeter-wave band or a quasi-millimeter wave band. SOLUTION: The electrostatic discharge protection circuit, which is connected to a semiconductor integrated circuit, protects the semiconductor integrated circuit from electrostatic discharge. The electrostatic discharge protection circuit includes conductive semiconductor substrate 10, a dielectric layer 13b formed above the conductive semiconductor substrate 10, and a second wiring layer 15 formed on the surface of the dielectric layer 13b. The second wiring layer 15 includes a first signal line 17 which is connected at its one end with a pad and at the other end with the semiconductor integrated circuit, and a second signal line 18 which is connected at its one end with the first signal line 17 and is grounded at the other end. COPYRIGHT: (C)2011,JPO&INPIT
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