发明名称 |
Formation Of Raised Source/Drain On A Strained Thin Film Implanted With Cold And/Or Molecular Carbon |
摘要 |
A method is disclosed for enhancing tensile stress in the channel region of a semiconductor structure. The method includes performing one or more cold-carbon or molecular carbon ion implantation steps to implant carbon ions within the semiconductor structure to create strain layers on either side of a channel region. Raised source/drain regions are then formed above the strain layers, and subsequent ion implantation steps are used to dope the raised source/drain region. A millisecond anneal step activates the strain layers and the raised source/drain regions. The strain layers enhances carrier mobility within a channel region of the semiconductor structure, while the raised source/drain regions minimize reduction in strain in the strain layer caused by subsequent implantation of dopant ions in the raised source/drain regions. |
申请公布号 |
US2010279479(A1) |
申请公布日期 |
2010.11.04 |
申请号 |
US20090434364 |
申请日期 |
2009.05.01 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
HATEM CHRISTOPHER R.;MAYNARD HELEN L.;RAMAPPA DEEPAK A. |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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