| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an epitaxial wafer having excellent crystallinity and improved light-emission luminance compared with the conventional epitaxial wafer. <P>SOLUTION: The epitaxial-wafer manufacturing method is configured as follows. An n-type layer 12 is formed on a substrate 11 and a p-type layer 13 is formed on the n-type layer 12 respectively by epitaxial growth. During the epitaxial growth, at least, gas for nitrogen doping is introduced when the n-type layer 12 and the p-type layer 13 are formed while gas for p-type dopant doping is introduced when the p-type layer 13 is formed. GaAsP or GaP is formed as the n-type layer 12 and the p-type layer 13. The p-type layer 13 is formed with a second p-type layer 13b, whose carrier concentration is higher than that of a first p-type layer 13a, at least after forming the first p-type layer 13a. An introduction amount of the gas for nitrogen doping is gradually reduced to 0 sccm during a period from the middle of the growth of the first p-type layer 13 to at least the end of the growth of the second p-type layer 13b. <P>COPYRIGHT: (C)2009,JPO&INPIT |
