发明名称 SPUTTERING APPARATUS AND FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a dual cathode type sputtering apparatus which can be downsized and can reduce production cost, and to provide a film deposition method. SOLUTION: The sputtering apparatus 1A comprises a vacuum chamber 3, at least a pair of targets 4, 5 provided in the vacuum chamber 3 and arranged opposite to an object S1 for film deposition, an AC power source 6 for applying the AC voltage Vmf1, Vmf2 to the targets 4, 5 so that the cathode and the anode are alternately changed between the pair of targets 4, 5, a high frequency power source 10 for generating the high frequency voltage Vrf to be applied in a superposed manner on the AC voltage Vmf1, Vmf2, and a high-speed switching circuit 11 which is connected between the high frequency power source 10 and the pair of targets 4, 5 to alternately change the high frequency voltage Vrf to each of the pair of targets 4, 5, and apply it thereto. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010248577(A) 申请公布日期 2010.11.04
申请号 JP20090100019 申请日期 2009.04.16
申请人 SUMITOMO HEAVY IND LTD 发明人 IWATA HIROSHI
分类号 C23C14/34 主分类号 C23C14/34
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