DEPOSITION METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a silicon nitride based insulating film, in which a dielectric constant is low and an etching resistance is excellent. SOLUTION: A deposition method includes: a step of forming a boron-containing silicon nitride layer by supplying silane-based gas (DCS), nitriding gas (NH3), and boron-containing gas (BCl3) on a substrate in this order, while successively carrying out N2purging; and a step of supplying activated nitriding gas (activated NH3) activated by plasma on the boron-containing silicon nitride layer, and repeats these steps in this order. COPYRIGHT: (C)2011,JPO&INPIT