发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a CoC-type semiconductor device capable of suppressing rupture of connection sections of semiconductor chips and occurrence of cracks in the semiconductor chips. <P>SOLUTION: A chip laminate is created by stacking a plurality of semiconductor chips 10 while connecting respective through electrodes 13 of the semiconductor chips 10 to each other, and forming a first sealing resin layer 14 for covering the periphery of the plurality of stacked semiconductor chips, and filling gaps between the semiconductor chips. Subsequently, the chip laminate is fixed on a support substrate or a wiring board 20 formed with prescribed wiring. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010251347(A) 申请公布日期 2010.11.04
申请号 JP20090095798 申请日期 2009.04.10
申请人 ELPIDA MEMORY INC 发明人 TSUJI DAISUKE
分类号 H01L25/065;H01L25/07;H01L25/18 主分类号 H01L25/065
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