| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem wherein a threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of a thin-film transistor, and a driving voltage is increased when the amount of shift from 0 V is large, which results in an increase in power consumption of a semiconductor device. <P>SOLUTION: A resin layer having improved flatness is formed as a first protective insulating film for covering an oxide semiconductor layer, and then a second protective insulating film is formed on the resin layer by a sputtering method or a plasma CVD method under a low power condition as the second protective insulating film. Further, for adjusting the threshold voltage to a desired value, gate electrodes are provided over and below the oxide semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
